错扣
Cross-sectional TEM reveals that the threading dislocation ( TD ) density in the ELO-GaN region is significantly reduced.
透射电子显微镜 ( TEM ) 的研究结果表明,横向外延区域GaN的位错密度明显减小.
The ends should be dressed as to avoid sharp edges or cross threading.
两端需穿着,以避免尖锐边缘或跨线程。
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